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Izabela Tszydel, Magdalena Kucinska, Tomasz Marszalek, Renata Rybakiewicz, Andrzej Nosal, Jaroslaw Jung, Maciej Gazicki-Lipman, Charalabos Pitsalidis, Christoforos Gravalidis, Stergios Logothetidis, Malgorzata Zagorska and Jacek Ulanski High-Mobility and Low Turn-On Voltage n-Channel OTFTs Based on a Solution-Processable Derivative of Naphthalene Bisimide Advanced Functional Materials 22

Article first published online: 25 MAY 2012 | DOI: 10.1002/adfm.201200258

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Application of zone-casting technique leads to air-operating n-channel field-effect tansistors (FETs), which have electron mobility that is improved by three orders of magnitude compared to transistors in which the same active layer, a naphthalene bisimide derivative, is spin-coated.

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