Benjamin G. Lee, Daniel Hiller, Jun-Wei Luo, Octavi E. Semonin, Matthew C. Beard, Margit Zacharias and Paul Stradins Strained Interface Defects in Silicon Nanocrystals Advanced Functional Materials 22
Interface defects in silicon nanocrystals strongly affect the photoluminescence (PL) efficiency and optical absorption. Passivation of the nanocrystals nearly eliminates dangling-bond defects, decreasing absorption below the quantum-confined bandgap and enhancing PL efficiency by an order of magnitude. Remaining, unpassivated, non-paramagnetic defects are revealed using photothermal deflection spectroscopy. Theoretical studies attribute these defects to distorted bonds at the nanocrystal surface: Si–Si and bridging Si–O–Si bonds.
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