Meysam Sharifzadeh Mirshekarloo, Kui Yao and Thirumany Sritharan Ferroelastic Strain Induced Antiferroelectric-Ferroelectric Phase Transformation in Multilayer Thin Film Structures Advanced Functional Materials 22
A new strategy to modulate the structure and function of ferroic thin films is presented. A ferroelastic strain in a magnetic shape memory alloy Ni-Mn-Ga thin film is found to completely change the stress in the antiferroelectric (Pb0.97,La0.02)(Zr0.90,Sn0.05,Ti0.05)O3 (PLZST) thin film below, which further results in antiferroelectric to ferroelectric phase transformation in the PLZST film. This finding provides a new strategy to modulate the structure and function of ferroic thin films.
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