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Andreas C. Fischer, Lyubov M. Belova, Yuri G. M. Rikers, B. Gunnar Malm, Henry H. Radamson, Mohammadreza Kolahdouz, Kristinn B. Gylfason, Göran Stemme and Frank Niklaus 3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching Advanced Functional Materials 22

Article first published online: 8 JUN 2012 | DOI: 10.1002/adfm.201200845

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A method for additive layer-by-layer fabrication of 3D Si micro- and nanostructures is reported. The fabrication is based on alternating chemical vapor deposition of Si and local implantation of gallium ions by focused ion beam (FIB) writing. In a final step, the defined 3D structures are formed by etching the silicon in KOH, in which the local ion implantation provides the etching selectivity.

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