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Stephen S. Nonnenmann, Mohammad A. Islam, Brian R. Beatty, Eric M. Gallo, Terrence McGuckin and Jonathan E. Spanier The Ferroelectric Field Effect within an Integrated Core/Shell Nanowire Advanced Functional Materials 22

Version of Record online: 25 JUL 2012 | DOI: 10.1002/adfm.201200865

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The ferroelectric field effect is demonstrated within individual semiconductor silicon-core, ferroelectric PbZr0.52Ti0.48O3 (PZT)-shell nanowires. The observed effect on the measured source–drain current approaches four orders of magnitude, despite a ferroelectric layer/semiconducting channel ratio nearly three orders smaller than that of conventional planar ferroelectric field-effect transistors (FeFETs).

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