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Nikolay A. Pertsev and Hermann Kohlstedt Magnetoresistive Memory with Ultralow Critical Current for Magnetization Switching Advanced Functional Materials 22

Version of Record online: 5 JUL 2012 | DOI: 10.1002/adfm.201200878

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The density of spin-polarized current needed for magnetization switching in spin-transfer torque magnetic random access memories (STT-MRAMs) is predicted to be drastically reduced near spin reorientation transitions driven by lattice strains and/or surface magnetic anisotropy. STT-MRAMs with suitable free layers combine low writing current with very high thermal stability of information storage even at high density.

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