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Subho Dasgupta, Ganna Stoesser, Nina Schweikert, Ramona Hahn, Simone Dehm, Robert Kruk and Horst Hahn Printed and Electrochemically Gated, High-Mobility, Inorganic Oxide Nanoparticle FETs and Their Suitability for High-Frequency Applications Advanced Functional Materials 22

Version of Record online: 20 JUL 2012 | DOI: 10.1002/adfm.201200951

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Ink-jet-printed and electrochemically gated, high-mobility field-effect transistors based on inorganic-oxide nanoparticles are presented. The speed of electrochemical gating is experimentally assessed with equivalent circuits involving blocking electrodes. Effective capacitance is calculated considering the double-layer capacitance and the electrolyte resistance. The electrolyte polarization is found to be fast enough to ensure that the maximum attainable speed of the long-channel, printed transistors is limited by the printing resolution.

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