Hyun Ho Choi, Wi Hyoung Lee and Kilwon Cho Bias-Stress-Induced Charge Trapping at Polymer Chain Ends of Polymer Gate-Dielectrics in Organic Transistors Advanced Functional Materials 22
The polymer chain ends of polymer gate-dielectrics (PGDs) can trap charges in organic field-effect transistors (OFETs). Under bias stress, the drain current decay is found to increase as the molecular weight (MW) of the PGD decreases (MW effect). The free volumes at polymer chain ends are sufficiently large to allow the residence of water molecules, the presence of which significantly increases the density of charge-trap sites.
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf