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Hyun Ho Choi, Wi Hyoung Lee and Kilwon Cho Bias-Stress-Induced Charge Trapping at Polymer Chain Ends of Polymer Gate-Dielectrics in Organic Transistors Advanced Functional Materials 22

Article first published online: 9 JUL 2012 | DOI: 10.1002/adfm.201201084

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The polymer chain ends of polymer gate-dielectrics (PGDs) can trap charges in organic field-effect transistors (OFETs). Under bias stress, the drain current decay is found to increase as the molecular weight (MW) of the PGD decreases (MW effect). The free volumes at polymer chain ends are sufficiently large to allow the residence of water molecules, the presence of which significantly increases the density of charge-trap sites.

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