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Yeon Sik Choi, Jinwoo Sung, Seok Ju Kang, Sung Hwan Cho, Ihn Hwang, Sun Kak Hwang, June Huh, Ho-Cheol Kim, Siegfried Bauer and Cheolmin Park Control of Current Hysteresis of Networked Single-Walled Carbon Nanotube Transistors by a Ferroelectric Polymer Gate Insulator Advanced Functional Materials 23

Article first published online: 9 OCT 2012 | DOI: 10.1002/adfm.201201170

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A simple and robust method is developed to control the characteristic current hysteresis of single-walled carbon nanotube (SWNT) network field-effect transistiors (FETs) by non-volatile ferroelectric polarization. A top-gate FET with a solution-processed SWNT network channel layer and a ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) gate insulator effectively suppresses the current hysteresis when the gate-voltage sweep exceeds the coercive voltage of the P(VDF-TrFE) film.

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