Eva Pellicer, Moisés Cabo, Emma Rossinyol, Pau Solsona, Santiago Suriñach, Maria Dolors Baró and Jordi Sort Nanocasting of Mesoporous In-TM (TM = Co, Fe, Mn) Oxides: Towards 3D Diluted-Oxide Magnetic Semiconductor Architectures Advanced Functional Materials 23
3D transition metal (TM = Co, Fe, Mn)-doped In2O3 oxide architectures are obtained by hard templating from mesoporous SBA-15 and KIT-6 silica hosts. The TM cations enter the lattice of the bixbyite In2O3, rendering mesoporous dilute-oxide magnetic semiconductors with compositions (In1−xTMx)2O3−y. The obtained materials exhibit a mixed ferromagnetic-paramagnetic behavior and have potential applications in spintronics.
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