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Hyun Ho Choi, Moon Sung Kang, Min Kim, Haena Kim, Jeong Ho Cho and Kilwon Cho Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula Advanced Functional Materials 23

Article first published online: 14 SEP 2012 | DOI: 10.1002/adfm.201201545

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Double stretched-exponential formula enables the bias-stress-induced charge trapping in semiconductor and gate-dielectric layers in organic field-effect transistors to be separately described. The gate-dielectric layer is found to play a more critical role than the semiconductor layer in the bias-stress effects, possibly because the distribution of the activation energy for charge trapping in the gate-dielectric layer is wider than the semiconductor.

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