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Ehren M. Mannebach, Josef W. Spalenka, Phillip S. Johnson, Zhonghou Cai, F. J. Himpsel and Paul G. Evans High Hole Mobility and Thickness-Dependent Crystal Structure in α,ω-Dihexylsexithiophene Single-Monolayer Field-Effect Transistors Advanced Functional Materials 23

Version of Record online: 14 SEP 2012 | DOI: 10.1002/adfm.201201548

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Two-dimensional monolayers of α,ω-dihexylsexithiophene (α,ω-DH6T) exhibit field-effect hole mobility of up to 0.032 cm2 V−1 s−1, higher than the mobilities commonly observed in monolayers of other small-molecule organic semiconductors. X-ray diffraction and spectroscopy reveal that the structure of these monolayers is distinct from bulk α,ω-DH6T.

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