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Hsin-Sheng Duan, Wenbing Yang, Brion Bob, Chia-Jung Hsu, Bao Lei and Yang Yang The Role of Sulfur in Solution-Processed Cu2ZnSn(S,Se)4 and its Effect on Defect Properties Advanced Functional Materials 23

Version of Record online: 16 OCT 2012 | DOI: 10.1002/adfm.201201732

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Defect properties of Cu2ZnSn(S,Se)4 with different sulfur content are investigated through admittance spectroscopy and charge density profiling, which are consistent with the cells' characteristics deduced from current density–voltage measurements. As the sulfur content increases, the bandgap of the absorber is enlarged, leading to open-circuit voltage increases, accompanied by a stronger recombination due to higher defect density.

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