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Suk Gyu Hahm, Yecheol Rho, Jungwoon Jung, Se Hyun Kim, Tissa Sajoto, Felix S. Kim, Stephen Barlow, Chan Eon Park, Samson A. Jenekhe, Seth R. Marder and Moonhor Ree High-Performance n-Channel Thin-Film Field-Effect Transistors Based on a Nanowire-Forming Polymer Advanced Functional Materials 23

Article first published online: 20 NOV 2012 | DOI: 10.1002/adfm.201202065

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n-Channel polymer field-effect transistor (FET) devices are fabricated via a simple coating process using a suspension containing thermally stable nanowires prepared from a new perylene diimide polymer. The devices show excellent performance with remarkably high average electron mobilities, high on/off ratios, low threshold voltages, and negligible hysteresis. These properties are attributed to the formation of nanowires and ordered phases with a high degree of molecular ordering and a preferential orientation within the active polymer layer. This may lead to the low-cost mass production of high-performance n-channel FET devices.

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