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Di Chen, Sean R. Bishop and Harry L. Tuller Non-stoichiometry in Oxide Thin Films: A Chemical Capacitance Study of the Praseodymium-Cerium Oxide System Advanced Functional Materials 23

Article first published online: 26 NOV 2012 | DOI: 10.1002/adfm.201202104

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Chemical capacitance is demonstrated to reliably measure the oxygen content of an oxide thin film. A key step in this analysis, the derivation of absolute oxygen vacancy concentration, is achieved using defect equilibria based power laws (see figure). Thermodynamic constants defining defect generation are extracted from the data and general agreement with bulk values is found, despite evidence to the contrary in the literature.

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