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Gun Hwan Kim, Jong Ho Lee, Youngbae Ahn, Woojin Jeon, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Tae Joo Park and Cheol Seong Hwang 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory Advanced Functional Materials 23

Article first published online: 18 OCT 2012 | DOI: 10.1002/adfm.201202170

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1 diode 1 resistor (1D1R) resistive memory devices with the crossbar array configuration composed of a stacked Schottky diode (Pt/TiO2/Ti/Pt) and unipolar resistive (URS) memory (Pt/TiO2/Pt) elements are fabricated, and their fluent functionality is proven. Atomic force microscopy is used to image one memory cell and scanning electron microscopy is used to study the 32 × 32 memory array.

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