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Yeyu Fang, R. K. Dumas, T. N. Anh Nguyen, S. M. Mohseni, S. Chung, C. W. Miller and Johan Åkerman A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States Advanced Functional Materials 23

Article first published online: 5 NOV 2012 | DOI: 10.1002/adfm.201202319

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A virtually continuous range of resistance states is demonstrated in graded anisotropy pseudo spin valves. An analysis of first-order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field-dependent population of up and down domains in the free layer.

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