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C. David Wright, Peiman Hosseini and Jorge A. Vazquez Diosdado Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices Advanced Functional Materials 23

Version of Record online: 12 DEC 2012 | DOI: 10.1002/adfm.201202383

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Nanometer-scale GeSbTe phase-change memory type devices are shown to provide an efficient and effective route to computing in which processing and storage are carried out simultaneously and at the same physical location, circumventing the “von Neumann bottleneck”. Advanced processing including factorization and fractional division are demonstrated, with single GeSbTe cells performing computations that require around 100 transistors in conventional Si processors.

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