Babak Nasr, Di Wang, Robert Kruk, Harald Rösner, Horst Hahn and Subho Dasgupta High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors Advanced Functional Materials 23
Flexible ZnO nanowire-based field-effect transistors (FETs) are built with a composite solid polymer electrolyte as the gate insulator to ensure battery-compatible, low voltage operation (≤2 V). Long-term, stable performance of the nanowire FETs in air is demonstrated. Even though electrochemically gated, the in-plane device geometry already shows an extremely fast switching of >100 kHz, which should increase further for the top-gate configuration.
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