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Dezheng Yang, Fangcong Wang, Yang Ren, Yalu Zuo, Yong Peng, Shiming Zhou and Desheng Xue A Large Magnetoresistance Effect in p–n Junction Devices by the Space-Charge Effect Advanced Functional Materials 23

Article first published online: 6 FEB 2013 | DOI: 10.1002/adfm.201202695

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A large magnetoresistance effect in conventional silicon p–n junctions is reported. By utilizing the magnetic field to manipulate the space-charge region of the p–n junction, a 2500% magnetoresistance ratio is observed at room temperature with H = 5 T. The p–n junction controlled by both electric field and magnetic field will open a new avenue for future magneto-electronics.

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