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M. A. Khan, Unnat S. Bhansali, Dongkyu Cha and H. N. Alshareef All-Polymer Bistable Resistive Memory Device Based on Nanoscale Phase-Separated PCBM-Ferroelectric Blends Advanced Functional Materials 23

Article first published online: 21 NOV 2012 | DOI: 10.1002/adfm.201202724

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All-polymer nonvolatile resitive memory devices are fabricated using a blend of ferroelectric poly(vinylidenefluoride–trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) with doped poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. The nanometer-scale phase separated films consist of PCBM domains that extend from the bottom to the top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. The devices show excellent performance with good ON/OFF ratios, low read voltages, and long retention times.

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