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Che-Wei Chang, Wei-Chun Tan, Meng-Lin Lu, Tai-Chun Pan, Ying-Jay Yang and Yang-Fang Chen Graphene/SiO2/p-GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters Advanced Functional Materials 23

Version of Record online: 11 MAR 2013 | DOI: 10.1002/adfm.201203035

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Metal-insulator-semiconductor (MIS) light- emitting diodes (LEDs) consisting of a graphene electrode on p-GaN substrate separated by an insulating SiO2 layer are reported. The novel MIS-LEDs have a unique tunability of the electroluminescence (EL) spectra depending on the bias conditions. The underlying mechanism can be interpreted as the tunneling of electrons and holes through the insulating layer in both polarities, which is different from the standard p-n junction model.

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