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Kevin A. McComber, Xiaoman Duan, Jifeng Liu, Jurgen Michel and Lionel C. Kimerling Crystal Growth: Single-Crystal Germanium Growth on Amorphous Silicon (Adv. Funct. Mater. 5/2012) Advanced Functional Materials 22

Version of Record online: 1 MAR 2012 | DOI: 10.1002/adfm.201290025

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A method for the growth of high-quality single-crystal germanium on amorphous silicon by ultrahigh vacuum chemical vapor deposition at temperatures less than 450 °C is presented on page 1049 by Jurgen Michel and co-workers. The growths proceed through constrictive channels and emerge with improved properties compared to as-deposited germanium. The growth mechanism and its implications for design of the growth structure are described.

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