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Tran Quang Trung, Nguyen Thanh Tien, Doil Kim, Mi Jang, Ok Ja Yoon and Nae-Eung Lee A Flexible Reduced Graphene Oxide Field-Effect Transistor for Ultrasensitive Strain Sensing Advanced Functional Materials 24

Version of Record online: 22 JUL 2013 | DOI: 10.1002/adfm.201301845

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The novelty of the rGO FET strain sensor is the incorporation of an rGO channel as a sensing layer in which modulation of the inter-nanosheet resistance (Rinter) due to weak coupling between adjacent nanosheets induces a large change in the transconductance of the rGO FET. The rGO FET device is ultrasensitive to extremely low strain levels, as low as 0.02%.

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