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Meng Zhang, Caizhi Liao, Yanli Yao, Zhike Liu, Fengfei Gong and Feng Yan High-Performance Dopamine Sensors Based on Whole-Graphene Solution-Gated Transistors Advanced Functional Materials 24

Article first published online: 18 NOV 2013 | DOI: 10.1002/adfm.201302359

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Whole graphene solution-gated transistors with graphene as both channel and gate are fabricated for the first time and used as dopamine sensors with a detection limit down to 1 nM and excellent selectivity. The sensing mechanism is attributed to the change of effective gate voltage applied on the transistors induced by the electro-oxidation of dopamine at the graphene gate.

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