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Kevin P. Musselman, Sebastian Albert-Seifried, Robert L. Z. Hoye, Aditya Sadhanala, David Muñoz-Rojas, Judith L. MacManus-Driscoll and Richard H. Friend Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO Advanced Functional Materials 24

Article first published online: 7 MAR 2014 | DOI: 10.1002/adfm.201303994

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Nitrogen doping of ZnO is shown to dramatically improve exciton dissociation at the interface between ZnO and a conjugated polymer. The improvements in exciton dissociation and device photocurrent follow from a reduction in the ZnO electron concentration and enhanced light-induced de-trapping of electrons from the surface of the nitrogen-doped ZnO.

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