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Seung-Kyun Kang, Suk-Won Hwang, Huanyu Cheng, Sooyoun Yu, Bong Hoon Kim, Jae-Hwan Kim, Yonggang Huang and John A. Rogers Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics Advanced Functional Materials 24

Article first published online: 9 APR 2014 | DOI: 10.1002/adfm.201304293

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Studies of the kinetics of hydrolysis of thin films of silicon oxides and nitrides and the use of these materials as encapsulants are presented for applications in water soluble, transient electronic devices. Dissolution rates of various oxides and nitrides depend on the pH and ionic concentration, the temperature of the solution, and the film properties. Encapsulation with these materials prevents water permeation for up to 10 days.

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