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Babak Nasr, Di Wang, Robert Kruk, Harald Rösner, Horst Hahn and Subho Dasgupta Flexible Electronics: High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors (Adv. Funct. Mater. 14/2013) Advanced Functional Materials 23

Version of Record online: 4 APR 2013 | DOI: 10.1002/adfm.201370068

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Part of an enhanced-mode electrolyte-gated nanowire channel metal oxide semiconductor field-effect transistor (MOSFET) is illustrated. As reported by Subho Dasgupta and co-workers on page 1750, the complete nanowire and a part of the in-plane gate electrode are covered with a printed droplet of composite solid polymer electrolyte, working as a dielectric. A positive gate bias attracts cations (Li+) towards the nanowire channel resulting in accumulation of charge carriers and driving it to the conducting (ON) state.

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