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J. H. Gao, R. J. Li, L. Q. Li, Q. Meng, H. Jiang, H. X. Li and W. P. Hu High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential Advanced Materials 19

Version of Record online: 6 SEP 2007 | DOI: 10.1002/adma.200701167

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Three simple, controlled steps are all it takes to synthesize the title pentacene analogue DBTDT (see figure). The material's high ionization potential, high thermal and photostability, high mobilities, and an on/off ratio larger than 106 at a substrate temperature of ca. 36 °C, as reported here, suggest that DBTDT will be extremely valuable for applications in plastic organic electronics.

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