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Lukas Bürgi, Mathieu Turbiez, Reto Pfeiffer, Frank Bienewald, Hans-Jörg Kirner and Carsten Winnewisser High-Mobility Ambipolar Near-Infrared Light-Emitting Polymer Field-Effect Transistors Advanced Materials 20

Version of Record online: 5 MAY 2008 | DOI: 10.1002/adma.200702775

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A polymer semiconductor with ambipolar charge transport properties, BBTDPP1, is presented. Solution-processed ambipolar field-effect transistors based on this material exhibit hole and electron mobilities of 0.1 cm2 V−1 s−1 and up to 0.09 cm2 V−1 s−1, respectively. Near-infrared light emission from top-gate as well as bottom-gate ambipolar field-effect transistors based on BBTDPP1 is also reported.

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