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Rainer Waser, Regina Dittmann, Georgi Staikov and Kristof Szot Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges Advanced Materials 21

Version of Record online: 6 JUL 2009 | DOI: 10.1002/adma.200900375

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This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..

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