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Naoki Fukata Impurity Doping in Silicon Nanowires Advanced Materials 21

Article first published online: 18 MAY 2009 | DOI: 10.1002/adma.200900376

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Raman scattering and electron spin resonance methods clarify the states of dopant atoms in Si nanowires by the observation of local vibrational peaks of B, Fano broadening of the optical phonon peak, and ESR signals of conduction electrons. These clearly demonstrate that B and P atoms are electrically activated in the crystalline core of Si nanowires.

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