E-mail a Wiley Online Library Link

Chao-Feng Sung, Dhananjay Kekuda, Li Fen Chu, Yuh-Zheng Lee, Fang-Chung Chen, Meng-Chyi Wu and Chih-Wei Chu Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing Advanced Materials 21

Version of Record online: 10 AUG 2009 | DOI: 10.1002/adma.200901215

Thumbnail image of graphical abstract

C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide glass, the transistors display electron mobilities as high as 0.21 cm2 V−1 s−1 and a threshold voltage of 0.7 V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field