Chao-Feng Sung, Dhananjay Kekuda, Li Fen Chu, Yuh-Zheng Lee, Fang-Chung Chen, Meng-Chyi Wu and Chih-Wei Chu Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing Advanced Materials 21
C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide glass, the transistors display electron mobilities as high as 0.21 cm2 V−1 s−1 and a threshold voltage of 0.7 V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates.
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