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Jun Liu, D. Bruce Buchholz, Robert P. H. Chang, Antonio Facchetti and Tobin J. Marks High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel Advanced Materials 22

Version of Record online: 20 MAY 2010 | DOI: 10.1002/adma.200903761

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High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large field-effect mobility of 110 cm2V−1s−1, a current on/off ratio of 104, and a low operating voltage of 1.0 V, along with very good optical transparency and mechanical flexibility.

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