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Jeremy Smith, Aneeqa Bashir, George Adamopoulos, John E. Anthony, Donal D. C. Bradley, Martin Heeney, Iain McCulloch and Thomas D. Anthopoulos Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V−1 s−1 Advanced Materials 22

Article first published online: 21 JUL 2010 | DOI: 10.1002/adma.201000195

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An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

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