E-mail a Wiley Online Library Link

Jeongho Park, William C. Mitchel, Lawrence Grazulis, Howard E. Smith, Kurt G. Eyink, John J. Boeckl, David H. Tomich, Shanee D. Pacley and John. E. Hoelscher Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE) Advanced Materials 22

Version of Record online: 20 AUG 2010 | DOI: 10.1002/adma.201000756

Thumbnail image of graphical abstract

A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C60 produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field