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Ben B. Y. Hsu, Ebinazar B. Namdas, Jonathan D. Yuen, Shinuk Cho, Ifor D.W. Samuel and Alan J. Heeger Split-Gate Organic Field Effect Transistors: Control Over Charge Injection and Transport Advanced Materials 22

Article first published online: 13 SEP 2010 | DOI: 10.1002/adma.201001509

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A split-gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.

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