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Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor and Ulrich Gösele Metal-Assisted Chemical Etching of Silicon: A Review Advanced Materials 23

Version of Record online: 21 SEP 2010 | DOI: 10.1002/adma.201001784

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Metal-assisted chemical etching (MACE) of silicon is controllable, reproducible, and can be used reliably to create well-defined nanostructures. The mechanism, the influence of various factors on MACE, the controllable fabrication of patterned Si and SiGe structures, the applications of Si structures created by MACE, and the etching of other semiconductors by the MACE are reviewed.

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