E-mail

E-mail a Wiley Online Library Link

Ursula Palfinger, Christoph Auner, Herbert Gold, Anja Haase, Johanna Kraxner, Thomas Haber, Meltem Sezen, Werner Grogger, Gerhard Domann, Georg Jakopic, Joachim R. Krenn and Barbara Stadlober Fabrication of n- and p-Type Organic Thin Film Transistors with Minimized Gate Overlaps by Self-Aligned Nanoimprinting Advanced Materials 22

Version of Record online: 24 SEP 2010 | DOI: 10.1002/adma.201001947

Thumbnail image of graphical abstract

A nanoimprinting process that enables fabrication of self-aligned p- and n-type organic thin film transistors with small channel lengths is presented. Nanoimprint lithography with back-side exposure permit precise definition of the channel length down to the submicrometer regime and a diminutive gate to source/drain overlap. The self-aligned manufacturing process enables transistor setups with minimized electrode overlaps resulting in distinct decrease of parasitic capacitances and considerable increase in transition frequency. Fully functional small channel OTFTs with p- and n-type semiconductors are fabricated on glass as well as on flexible substrates with transition frequencies up to 400 kHz.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field

SEARCH