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Ursula Palfinger, Christoph Auner, Herbert Gold, Anja Haase, Johanna Kraxner, Thomas Haber, Meltem Sezen, Werner Grogger, Gerhard Domann, Georg Jakopic, Joachim R. Krenn and Barbara Stadlober Fabrication of n- and p-Type Organic Thin Film Transistors with Minimized Gate Overlaps by Self-Aligned Nanoimprinting Advanced Materials 22

Version of Record online: 24 SEP 2010 | DOI: 10.1002/adma.201001947

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A nanoimprinting process that enables fabrication of self-aligned p- and n-type organic thin film transistors with small channel lengths is presented. Nanoimprint lithography with back-side exposure permit precise definition of the channel length down to the submicrometer regime and a diminutive gate to source/drain overlap. The self-aligned manufacturing process enables transistor setups with minimized electrode overlaps resulting in distinct decrease of parasitic capacitances and considerable increase in transition frequency. Fully functional small channel OTFTs with p- and n-type semiconductors are fabricated on glass as well as on flexible substrates with transition frequencies up to 400 kHz.

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