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Cheol-Joo Kim, Hyun-Seung Lee, Yong-Jun Cho, Jee-Eun Yang, Ru Ri Lee, Ja Kyung Lee and Moon-Ho Jo On-Nanowire Band-Graded Si:Ge Photodetectors Advanced Materials 23

Article first published online: 14 JAN 2011 | DOI: 10.1002/adma.201004034

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An on-nanowire (on-NW) band-graded photodetector that pertains to the on-nanowire composition gradation from pure Si to pure Ge, Si1–xGex (0 ≤ x ≤ 1), is reported. The spectral onset of interband photocarrier generation and photocurrent amplitude are on-NW de-multiflexed over the continuously varying energy band gap and surface trap state density in an individually addressable manner.

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