Xiaomu Wang, Jian-Bin Xu, Chengliang Wang, Jun Du and Weiguang Xie High-Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self-Assembled Monolayers Advanced Materials 23
A SiO2/Si substrate modified by an octadecyltrimethoxysilane (OTMS) self-assembled monolayer is used to obtain high-quality graphene devices with low intrinsic doping level. The carrier mobility can reach 47 000 cm2 V−1 s−1. The findings will pave the way for approaching the intrinsic properties of supported graphene, elucidating the scattering origins, and gaining a better understanding of the mechanism of carrier transport in graphene.
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