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Chang Bao Han, Chuan He and Xin Jian Li Near-Infrared Light Emission from a GaN/Si Nanoheterostructure Array Advanced Materials 23

Version of Record online: 26 SEP 2011 | DOI: 10.1002/adma.201101801

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A near-infrared (NIR) light-emitting diode is fabricated by constructing a GaN/Si nanoheterostructure array by growing GaN nanograins onto a silicon nanoporous pillar array (Si-NPA). A strong and tunable NIR electroluminescence is observed and the luminescent mechanism is attributed to the carrier radiative recombination occurring at the interface between GaN and Si-NPA.

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