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Ji Xu, Sung Woo Hong, Weiyin Gu, Kim Y. Lee, David S. Kuo, Shuaigang Xiao and Thomas P. Russell Fabrication of Silicon Oxide Nanodots with an Areal Density Beyond 1 Teradots Inch−2 Advanced Materials 23

Article first published online: 24 NOV 2011 | DOI: 10.1002/adma.201102964

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The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch−2.

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