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H. T. Yi, Y. Chen, K. Czelen and V. Podzorov Vacuum Lamination Approach to Fabrication of High-Performance Single-Crystal Organic Field-Effect Transistors Advanced Materials 23

Version of Record online: 22 NOV 2011 | DOI: 10.1002/adma.201103305

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A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation.

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