Ben B.Y. Hsu, Chunhui Duan, Ebinazar B. Namdas, Andrea Gutacker, Jonathan D. Yuen, Fei Huang, Yong Cao, Guillermo C. Bazan, Ifor D. W. Samuel and Alan J. Heeger Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors Advanced Materials 24
Version of Record online: 26 JAN 2012 | DOI: 10.1002/adma.201103513
The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.
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