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Jinhua Li, Zhenhua Sun and Feng Yan Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator Advanced Materials 24

Version of Record online: 24 NOV 2011 | DOI: 10.1002/adma.201103542

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A relaxor ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) exhibits a high relative dielectric constant (k) (∼60). The high-k polymer is used successfully in solution processable low-voltage OTFTs as the gate insulator for the first time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm2 V−1 s−1 at an operating voltage of 3 V.

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