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Peng Gao, Christopher T. Nelson, Jacob R. Jokisaari, Yi Zhang, Seung-Hyub Baek, Chung Wung Bark, Enge Wang, Yuanming Liu, Jiangyu Li, Chang-Beom Eom and Xiaoqing Pan Direct Observations of Retention Failure in Ferroelectric Memories Advanced Materials 24

Version of Record online: 14 FEB 2012 | DOI: 10.1002/adma.201103983

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Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.

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