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Massimiliano Cavallini, Zahra Hemmatian, Alberto Riminucci, Mirko Prezioso, Vittorio Morandi and Mauro Murgia Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions Advanced Materials 24

Article first published online: 24 FEB 2012 | DOI: 10.1002/adma.201104301

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A nanomemristor based on SiO2 is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.

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