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Xiaomu Wang, Weiguang Xie, Jun Du, Chengliang Wang, Ni Zhao and Jian-Bin Xu Graphene/Metal Contacts: Bistable States and Novel Memory Devices Advanced Materials 24

Version of Record online: 10 APR 2012 | DOI: 10.1002/adma.201104574

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Graphene field-effect transistors (GFETs) with different metal electrodes are fabricated to explore the contact characteristics. The contact resistance and the spatial potential distribution along the graphene/metal interface are investigated. The low-doped graphene/metal contact can be reversibly switched between “ohmic” and “space-charge region limited” states. The observed switching attributes are highly reproducible and stable, which provides a new avenue to produce high-performance graphene memory devices.

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