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Moni Baskey and Shyamal K Saha A Graphite-Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 Å Advanced Materials 24

Version of Record online: 23 FEB 2012 | DOI: 10.1002/adma.201104717

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The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.

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